Tantalum and Niobium-Based Capacitors by Yuri Freeman

Tantalum and Niobium-Based Capacitors by Yuri Freeman

Author:Yuri Freeman
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham


Even though the de-rating reduces the failure rate in finished tantalum capacitors, de-rating approach to the capacitor technology may have negative effect on the performance and reliability of these capacitors, especially, at higher working voltages. The Ta2O5 dielectric is thicker in the capacitors with de-rating in comparison to the thickness of the dielectric in non-de-rated capacitors with the same working voltage. As it was discussed earlier, thicker Ta2O5 dielectrics formed at higher formation voltages are more susceptible to field and thermal crystallization of the amorphous matrix in comparison to the thinner Ta2O5 dielectrics formed at lower formation voltages. As an example, Fig. 3.17 shows SEM images of the surface of conventional tantalum anodes formed at formation voltages 130 V and 190 V.

Fig. 3.17SEM images of tantalum anodes formed at formation voltages 130 V (a) and 190 V (b)



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